Studies of the chemical vapor deposition method of generating graphene
Table Of Contents
- 1.1INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.
- 1.1Carbon Materials . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.
- 1.2Forms of carbon . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.
- 1.3Mass production of graphene . . . . . . . . . . . . . . . . . . . . 4
1.
- 1.4Problem statement . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.
- 1.5Scope of research . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.
- 1.6Research Objectives . . . . . . . . . . . . . . . . . . . . . . . . 5
2 6
- 2.1SCOPE OF THE PRESENT INVESTIGATIONS . . . . . . . . . . . . 6
- 2.2GRAPHENE: AN OVERVIEW . . . . . . . . . . . . . . . . . . . . . . 8
- 2.3Synthesis Methods of Graphene . . . . . . . . . . . . . . . . . . . . . . 9
2.
- 3.1Mechanical exfoliation of graphite crystals . . . . . . . . . . . . 10
2.
- 3.2Arc discharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.
- 3.3Epitaxial growth on silicon carbide . . . . . . . . . . . . . . . . 10
2.
- 3.4Exfoliation of graphite oxide . . . . . . . . . . . . . . . . . . . . 11
2.
- 3.5Chemical Vapor Deposition (CVD) . . . . . . . . . . . . . . . . 11
- 2.4Types of graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.
- 4.1Stability of graphene . . . . . . . . . . . . . . . . . . . . . . . . 14
- 2.5Structure of Graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.
- 5.1Electronic structure of Graphene . . . . . . . . . . . . . . . . . 15
2.
- 5.2Phonon in graphene . . . . . . . . . . . . . . . . . . . . . . . . 19
2.
- 5.3Raman Spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . 21
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2.
- 5.4Quantum Hall Eect . . . . . . . . . . . . . . . . . . . . . . . . 26
2.
- 5.5Ballistic conductivity . . . . . . . . . . . . . . . . . . . . . . . . 28
- 2.6Properties of graphene . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
2.
- 6.1Electrical and electrochemical properties . . . . . . . . . . . . . 30
2.
- 6.2Electronic transport . . . . . . . . . . . . . . . . . . . . . . . . 31
2.
- 6.3Magnetic properties . . . . . . . . . . . . . . . . . . . . . . . . . 31
2.
- 6.4Polymer composite . . . . . . . . . . . . . . . . . . . . . . . . . 33
2.
- 6.5Surface area of graphene . . . . . . . . . . . . . . . . . . . . . . 33
2.
- 6.6Surface and sensor properties . . . . . . . . . . . . . . . . . . . 35
2.
- 6.7Electrodes in solar cells . . . . . . . . . . . . . . . . . . . . . . . 37
2.
- 6.8Hydrogen Storage . . . . . . . . . . . . . . . . . . . . . . . . . . 38
2.
- 6.9Support membrane for transmission electron microscopy . . . . 39
2.
- 6.10Binding of DNA nucleobases and nucleosides . . . . . . . . . . . 39
2.
- 6.11Molecular sieves . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
2.
- 6.12Graphene the emergence of new silicon . . . . . . . . . . . . . . 40
2.
- 6.13Graphane . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3 42
- 3.1EXPERIMENTAL AND RELATE ASPECTS . . . . . . . . . . . . . . 42
3.
- 1.1Synthesis and characterization of graphene . . . . . . . . . . . . 42
- 3.2Characterization Techniques . . . . . . . . . . . . . . . . . . . . . . . . 43
4 45
- 4.1RESULTS AND DISCUSSION . . . . . . . . . . . . . . . . . . . . . . 45
4.
- 1.1Synthesis and characterization of graphenes . . . . . . . . . . . 45
4.
- 1.2FESEM analysis . . . . . . . . . . . . . . . . . . . . . . . . . . 45
4.
- 1.3Raman spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . 49
4.
- 1.4TEM analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
5 54
- 5.1CONCLUSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
- 5.2Future Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
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Thesis Abstract
Abstract
Chemical vapor deposition (CVD) has emerged as a powerful method for the large-scale synthesis of high-quality graphene films. This technique involves the decomposition of hydrocarbon precursor gases on a heated substrate to produce graphene layers. The growth parameters such as temperature, pressure, gas flow rate, and catalyst choice play crucial roles in determining the quality and properties of the synthesized graphene. Various studies have been conducted to investigate the effects of these parameters on the growth process and the resulting graphene film characteristics. Temperature is a critical factor in CVD graphene synthesis as it influences the kinetics of the reaction and the quality of the graphene film. Higher temperatures generally lead to faster growth rates and better graphene quality, but excessive temperatures can also result in defects and impurities. Optimizing the temperature can enhance the structural integrity and electrical properties of the graphene film. Pressure in the CVD chamber affects the gas-phase reactions and the growth kinetics of graphene. By controlling the pressure, researchers can tune the nucleation density, layer uniformity, and grain size of the graphene film. Low pressures typically result in fewer defects and higher crystallinity of the graphene layers, while high pressures can promote faster growth but may lead to lower-quality graphene. The choice of precursor gases and their flow rates significantly impact the composition and structure of the synthesized graphene. Hydrocarbon gases such as methane and ethylene are commonly used carbon sources for CVD graphene growth. Adjusting the flow rates of these gases can control the carbon supply and the growth rate of the graphene film. Furthermore, introducing additional gases like hydrogen can influence the nucleation process and the final morphology of the graphene layers. Catalysts are often employed in CVD processes to facilitate the decomposition of carbon precursors and the growth of graphene. Transition metals such as copper, nickel, and cobalt have been widely studied as catalyst materials for graphene synthesis. The choice of catalyst can influence the nucleation density, domain size, and crystal orientation of the graphene layers. Moreover, catalyst engineering strategies have been explored to enhance the control over the graphene growth process and improve the film quality. Overall, the systematic investigation of growth parameters in CVD graphene synthesis is essential for tailoring the properties of graphene films for specific applications in electronics, energy storage, sensors, and other advanced technologies. By understanding the underlying mechanisms of graphene growth, researchers can further optimize the CVD process to achieve scalable production of high-performance graphene materials.
Thesis Overview
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1.1 INTRODUCTION<br>1.1.1 Carbon Materials<br>Group IVA, consists of carbon (C), silicon (Si), germanium (Ge), tin (Sn) and lead (Pb).<br>Carbon is the chief constituent of coal, and it forms the backbone of the hydrocarbon<br>molecules in oil and natural gas. The element, carbon, is one of the most versatile<br>elements in the periodic table in terms of the number of compounds it may form.<br>Carbon also occur widely in carbonate rocks, such as limestone, dolomite and marble.<br>Basically, carbon has 3 allotropes i.e. diamond, carbon nanotubes and fullerene. Each<br>of these carbon allotropes has dierent features due to the bonding between carbon<br>atoms. Carbon has four valence electrons with an electronic conguration of 1s22s22p2.<br>It may form virtually an innite number of compounds. This is largely due to the types<br>of bonds it can form and the number of dierent elements it can join in bonding.[1]<br>Carbon Bonding<br>Bonding in any element will take place with only the valence shell electrons. Carbon<br>may form single, double and triple bonds. The valence shell electrons are found in<br>the incomplete, outermost shell. In the ground state (lowest energy state), two of the<br>electrons are in the 1s orbital (K shell), two are in the 2s orbital (L shell) while the<br>third pair is in the 2p orbital (L shell). The 1s electrons are considered to be the core<br>electrons and are not available for bonding. There are two unpaired electrons in the<br>2p orbitals, so if carbon were to hybridize from this ground state, it would be able to<br>1<br>Figure 1.1: Orbital diagram of carbon at ground state.<br>form at most two bonds. Recall that energy is released when bonds are formed, so<br>it would be to carbon’s benet to try to maximize the number of bonds it can form.<br>For this reason, carbon will form an excited state by promoting one of its 2s electrons<br>into its empty 2p orbital and hybridize from the excited state. By forming this excited<br>state, carbon will be able to form four bonds. Since both the 2s and the 2p orbital are<br>half-lled, the excited state is relatively stable.[1]<br>1.1.2 Forms of carbon<br>Carbon sits directly above silicon on the periodic table and therefore both have 4<br>valence electrons. However, unlike silicon, carbon’s 4 valence electrons have very similar<br>energies, so their wavefunctions mix easily facilitating hybridization. In carbon, these<br>valence electrons give rise to 2s, 2px, 2py, and 2pz orbitals while the 2 inner shell<br>electrons belong to a spherically symmetric 1s orbital that is tightly bound and has<br>an energy far from the Fermi energy of carbon. For this reason, only the electrons in<br>the 2s and 2p orbitals contribute to the solid-state properties of graphite. This unique<br>ability to hybridize sets carbon apart from other elements and allows carbon to form<br>0D, 1D, 2D, and 3D structures.[2]<br>Diamond<br>The three dimensional form of carbon is diamond. It is sp3 bonded forming 4 covalent<br>bonds with the neighboring carbon atoms into a face-centered cubic atomic structure.<br>Because the carbon-carbon covalent bond is one of the strongest in nature, diamond has<br>a remarkably high Youngs modulus and high thermal conductivity. Undoped diamond<br>2<br>has no free electrons and is a wide band gap ( 5:5eV) insulator. The exceptional<br>physical properties and clever advertising such as Diamonds are forever contribute<br>to its appeal as a sought after gem. When properly cut and polished, it is set to make<br>beautiful pieces of jewellery. One of the most famous of these is the Hope Diamond. For<br>many of the large, high quality crystals used to make jewelry, diamond must be mined.<br>The smaller defective crystals are used as reinforcement in tool bits which utilize its<br>superior hardness for cutting applications. [2] The high thermal conductivity of dia-<br>mond makes it a potentially useful material for microelectronics where heat dissipation<br>is currently a major problem. However, diamonds scarcity makes this unappealing.<br>To this end, scientists and engineers are trying to grow large diamond wafers. One<br>method to do so is chemical vapor deposition (CVD) where solid carbon is deposited<br>from carbon containing gases such as methane or ethylene. By controlling the growth<br>conditions, it is possible to produce defect free diamonds of limited size.[2]<br>Fullerenes and carbon nanotubes<br>More exotic forms of carbon are the low dimensional forms known as the fullerenes<br>which consist of the 0 dimensional C60 molecule and its 1 dimensional derivative, carbon<br>nanotubes. A single walled carbon nanotube is a single layer of graphite, referred to<br>as graphene, rolled into a cylindrical tube with a 1nm diameter Carbon nanotubes<br>can be metals or semiconductors and have mechanical properties similar to diamond.<br>They attracted a lot of attention from the research community and dominated the<br>scientic headlines during the 1990s and early 2000. This interest in nanotubes was<br>partly responsible for the resurgent interest in graphene as a potentially important and<br>interesting material for several applications.[2]<br>Graphene and Graphite<br>Graphene and Graphite are the two dimensional sp2 hybridized forms of carbon found<br>in pencil lead. Graphite is a layered material formed by stacks of graphene sheets sepa-<br>rated by 0:3 nm and held together by weak van der Waals forces. The weak interaction<br>between the sheets allows them to slide relatively easily across one another. This gives<br>pencils their writing ability and graphite its lubricating properties, however the nature<br>of this interaction between layers is not entirely understood. Another frictional eect<br>3<br>believed to be important is the registry of the lattice between the layers. A mismatch<br>in this registry is believed to give graphite the property of superlubricity where the<br>frictional force is reduced considerably. A single 2-D sheet of graphene is a hexagonal<br>structure with each atom forming 3 bonds with each of its nearest neighbors. These<br>are known as the bonds oriented towards these neighboring atoms and formed from 3<br>of the valence electrons. These covalent carbon-carbon bonds are nearly equivalent to<br>the bonds holding diamond together giving graphene similar mechanical and thermal<br>properties as diamond. The fourth valence electron does not participate in covalent<br>bonding. It is in the 2pz state oriented perpendicular to the sheet of graphite and<br>forms a conducting band. The remarkable electronic properties of carbon nanotubes<br>are a direct consequence of the peculiar band structure of graphene, a zero bandgap<br>semiconductor with 2 linearly dispersing bands that touch at the corners of the rst<br>Brillouin zone .[16] Bulk graphite has been studied for decades but until recently there<br>were no experiments on graphene. This was due to the diculty in separating and<br>isolating single layers of graphene for study.[2]<br>1.1.3 Mass production of graphene<br>The main problem with graphene is to nd a way to produce graphene in/on a large<br>scale and at a low cost, consequently the full potential of graphene for applications<br>will not be realized until their growth can be further optimized and controlled. Re-<br>producibility of the graphene production is also another problem studied by many<br>researchers. Among the dierent techniques that have been applied for the mass pro-<br>duction of graphene, chemical vapor deposition (CVD) appears to be the most promis-<br>ing method owing to its relatively low cost and potentially high yield production. The<br>CVD method seems to be the best because of the lower reaction temperature. Their<br>future use will also strongly depend on the development of simple, ecient and inex-<br>pensive technologies for large scale production.<br>1.1.4 Problem statement<br>There has been great progress in both the production and application of graphene since<br>it discovery in 2004. Till now, graphene has been commonly synthesized using four<br>4<br>dierent methods namely, arc discharge, epitaxial growth on silicon carbide, exfoliation<br>of graphite oxide and mechanical exfoliation. The chemical vapor deposition (CVD)<br>method has shown to be a promising method to synthesize graphene on a large scale.<br>However, the problems encountered in the CVD method are the many factors that<br>in uence the production of the dierent forms of graphene such as types of catalyst,<br>carbon source, ow rate of precursors and the operating temperature. Among these<br>parameters, the types of catalyst and carbon source are the most critical factors in u-<br>encing the types and structures of graphene produced. Hence, a detailed study on the<br>eect of the types of catalyst and carbon source on the formation of dierent types<br>and structure of graphene will be undertaken.<br>1.1.5 Scope of research<br>The scopes of this study are listed as below:<br>1. To prepare series of substrate supported catalysts.<br>2. To synthesize graphene from dierent precursors via chemical vapor deposition<br>(CVD).<br>3. To characterize the as-synthesized graphene using:<br>a Field Emission Scanning Electron Microscopy (FESEM),<br>b Atomic Force Microscopy (AFM),<br>c Raman spectroscopy,<br>d Transmission Electron Microscopy (TEM).<br>1.1.6 Research Objectives<br>The objectives of this research are:<br>1. To synthesize graphene using dierent types of transition metals as catalysts and<br>dierent carbon sources by the chemical vapor deposition (CVD) method.<br>2. To characterize the as-synthesized graphene samples.<br>5
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